Growth and Characterization of Ferroelectric Lanthanum-Doped Hafnia
Hafnia-based ferroelectrics show great promise as future nonvolatile memory devices, however, their issues regarding device inconsistency across their lifetime, coupled with the relatively short total lifetime, makes these devices only theoretical as of now. In this thesis, an ALD deposition recipe for lanthanum oxide deposition was created. Using this recipe, lanthanum-doped hafnia thin films were
