A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields
We investigate the phase transitions in InAs/GaSb quantum wells sandwiched between two wide-gap AlSb barrier layers under an external electric field perpendicular to interfaces. The Schrodinger and the Poisson equations are solved self-consistently to derive the subband dispersions, the potential profile, the electron charge distribution in the InAs layer, and the hole charge distribution in the G