Optimization of MoRe contacts to InGaAs Quantum Wells
This thesis presents the design, fabrication, and characterization of molybdenum–rhenium (MoRe) based MOSFET on InAlAs and InGaAs heterostructures, aiming to integrate superconducting contacts with III–V semiconductors for hybrid quantum compatible devices. The study addresses interfacial challenges that limit contact transparency and investigates different surface preparation and passivation tech
