Investigation of Resistive Random Access Memory for 1T1R Nanowire Array Integration
As modern electronics have started to reach its physical scaling limits, novel architectures and physics is needed to meet future demands. Oxide-based Resistive Random Access Memory (RRAM) is a new emerging technology that uses filament formation and rupture in thin oxides to generate resistive switching. Structure of RRAM devices often use transistors as selector devices. In this work a one-trans