Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
The impact of different carbon concentrations in the Al 0.06 Ga 0.94 N graded back-barrier and GaN buffer of high electron mobility transistors (HEMTs) is investigated. Four epi-wafers with different carbon concentrations, ranging from 1 × 10 17 to 5 × 10 17 cm −3 , were grown by metal organic chemical vapor deposition (MOCVD). HEMTs with 100 and 200 nm gate lengths were fabricated and characteriz
