Scalable Vertical In-Ga-As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width
Heterogeneous integration of III-V narrow bandgap transistors on silicon technology is desirable for high frequency circuit implementations. Such high-speed transistors must, however, scale to large gate widths to be suitable for general circuit design. Averaging among many variable channels is a key challenge for nanowire devices. A simplified, but high-speed compatible, nanowire device process w
