Band structure of segmented semiconductor nanowires
We have calculated the band structures for strained segmented nanowires involving all combinations of AlN, GaN, InN, AlP, GaP, AlAs, GaAs, InP, InAs, AlSb, GaSb, and InSb, as a function of segment length. This was done for two different growth directions of the wires, [100] and [111]. Both the Gamma and the X conduction-band minima were included in the calculations as well as the valence bands. Sh