Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
We present a detailed study of the effect of gate-oxide-related defects (traps) on the small-signal radio frequency (RF) response of III-V nanowire MOSFETs and find that the effects are clearly identifiable in the measured admittance parameters and in important design parameters such as h21 (forward current gain) and MSG (maximum stable gain). We include the identified effects in a small-signal mo