D-band Power Amplifiers in Vertical InGaAs Nanowire MOSFET Technology for 100 Gbps Wireless Communication
Two different topologies of power amplifiers (PAs) are designed in the frequency range 130-174.8 GHz for use in backhaul transmitters. These are the pseudo-differential common source (PDCS) and the single-ended stacked amplifier topologies. The PAs are designed in Cadence AWR design environment with virtual source models, implemented in Verilog-A, of InGaAs nanowire transistors using a 20 nm gate