Growth and characterization of honeycomb SiC monolayer on a TaC(111) surface
This thesis proves the successful synthesis of silicon carbide (SiC) monolayers on the tantalum carbide (TaC) (111) substrate through a novel bottom-up growth method, offering improved control over the supply of constituent materials for a more detailed study of the formation process. Initial examination of the clean TaC(111) surface revealed surface-induced states in its electronic band structure