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The structural and dielectric properties of gadolinium oxide (Gd2O3) grown on Si(001) depending on the epitaxial growth conditions were investigated. Gd2O3 layers were grown at temperatures between 250 °C and 400 °C with an oxygen partial pressure between 2 x 10-7 mbar and 5 x10-7 mbar. The crystal structure of the Gd2O3 turns out to be monoclinic with rotational domains as revealed by x-ray diffr
