Surface effects in quasiatomic layer etching of silicon
The current investigation explores the surface effects of quasiatomic layer etching (Q-ALE) of silicon (Si), focusing on the interplay of process parameters, such as Ar+ ion energy, and their impact on etch rate, surface roughness, and material damage. Using a chlorine-based reactive ion etching tool at varying radio frequency bias voltages, the ion energy distribution and etching characteristics
