Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
We report on the influence of doping on the band-edge abruptness of InAs/GaSb p-n and p-i-n tunnel diodes. Understanding and fabrication of a well-defined and sharp band edge is mandatory for tunnel FET operation. InAs/GaSb nanowire junctions were selectively grown by metal organic chemical vapor deposition (MOCVD) on silicon-on-insulator (SOI) substrates using template assisted selective epitaxy