Growth of non-polar and semi-polar GaN on sapphire substrates by magnetron sputter epitaxy
Non-polar and semi-polar III-nitrides have beneficial properties for various electronic applications such as light emitting diodes and photodetectors due to the elimination or reduction of polarization effects. However, cost-effective manufacturing of non-polar and semi-polar III-nitride films with sufficient film quality is not feasible yet. We report an investigation of the morphological and str
