Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
Memristors implemented as resistive random-access memories (RRAMs) owing to their low power consumption, scalability, and speed are promising candidates for in-memory computing and neuromorphic applications. Moreover, a vertical 3D implementation of RRAMs enables high-density crossbar arrays at a minimal footprint. Co-integrated III–V vertical gate-all-around MOSFET selectors in a one-transistor-o