Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
Heterostructure nanowires have many potential applications due to the avoidance of interface defects by lateral strain relaxation. However, most heterostructure semiconductor nanowires suffer from persistent interface compositional grading, normally attributed to the dissolution of growth species in the common alloy seed particles. Although progress has been made for some material systems, most bi