Impact of Acceleration Voltage on Cathodoluminescence for Defect Identification in InGaN Quantum Wells
Micro-LEDs have emerged as a hot research topic due to their potential for next-generation display and lighting applications, necessitating advanced characterization techniques to optimize their performance. This study demonstrates the advantage of cathodoluminescence in the scanning electron microscope to be a critical tool for the optical characterization of InGaN platelets with red quantum well
