Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
Switching of the group-III element in III-V nanowire heterostructures is difficult due to the high solubility of group-III atoms in the Au seed particle. In addition, switching from Sb to a different group-V element has not been achieved in binary materials, largely due to its high solubility in Au. In MOVPE growth the use of Sb precursors presents further complications due to reactor background c