Surface modification of III-V nanostructures studied by low-temperature scanning tunneling microscopy
In the past decade, driven by the demand for materials with high performance for next-generation semiconductor devices (e.g., for quantum computing), the exploration of III-V semiconductor materials and the design of improved devices based on these materials has extended to the nanometer scale, with several highlights in the studies of quantum wells, quantum dots, and nanowires (NW) in recent year
