Formation of self-assembled Gd2O3 nanowire-like structures during epitaxial growth on Si(001).
The structural and morphological properties of gadolinium oxide (Gd 2O 3) grown at high temperatures with molecular beam epitaxy on Si(001) were investigated for different stages of growth. The Gd 2O 3 layers were grown at 850 °C with different oxygen partial pressures and substrate miscuts. RHEED and XRD investigations indicate an initial formation of silicide and a subsequent transformation into