Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
Although AlGaN/GaN HEMTs with high power and current gain have been demonstrated in RF device applications, at high signal operation they show an inherent non-linear behavior which leads to gain compression and signal distortion. Polarization-doped AlGaN/GaN HEMTs, with a compositionally graded channel enables a linear response improvement through formation of a 3-D electron gas. In this work, we