The STM Study of Bi Adsorption on the InAs(111)B Surface
Semiconductors composed of group III and group V elements have a variety of promising applications, such as topological insulators and quantum computers. Among this category of semiconductors, bismuth (Bi)-containing III-V compounds are able to make these applications possible. However, the difficulty was found to alloy Bi atoms into the host lattice. To solve the problem of material fabrication,
