XANES studies of Mn K and L-3,L-2 edges in the (Ga,Mn) As layers modified by high temperature annealing
Ga1-xMnx As is commonly considered as a promising material for microelectronic applications utilizing the electron spin. One of the ways that allow increasing the Curie temperature above room temperature is to produce second phase inclusions. In this paper Gal-,Mn.As samples containing precipitations of ferromagnetic MnAs are under consideration. We focus on the atomic and electronic structure aro
