Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit. The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors (TFETs), requires the implementation of advanced transistor architectures including FinFETs and nanowire devices. Moreover, integration of novel materials with high e
